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DRF200G
15V, 8A, 30MHz
MOSFET Driver
The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with 3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents 8A RMS, while dissipating 60W.
IN
DRF200
SG
GND +Vdd OUT
FEATURES
* Switching Frequency: DC TO 30MHz 50 Load * Switching Frequency: DC TO 15MHz 3nf Load * Switching Speeds 10ns 50, 15ns 3nF Load * Low Pulse Width Distortion, 2% * Single Power Supply * 1V CMOS Schmitt Trigger Input ~ 1V Hysteresis * Current Output Pk 8A RMS * Power Dissipation Capability 60W * RoHS compliant
TYPICAL APPLICATIONS
* MOSFET Drivers * RF Generators * Switch Mode Power Amplifiers * Digital Output Amplifiers * Pulse Generators * Laser Diode Drivers * Ultrasound Transducer Drivers * Acoustic Optical Modulators * High Power Clock Drivers
Driver Absolute Maximum Ratings
Symbol VDD IN IO PK TJMAX Parameter Supply Voltage Input Single Voltage Output Current Peak Operating Temperature Ratings 18 -.7 to +5.5 8 175 Unit V A C
Driver Specifications
Symbol VDD IN IN(R) IN(F) IDDQ IO Coss Ciss RIN VT(ON) VT(OFF) TD tr tf Parameter Supply Voltage Input Voltage Input Voltage Rising Edge Input Voltage Falling Edge Quiescent Current Output Current Output Capacitance Input Capacitance Input Parallel Resistance Input, Low to High Out Input, High to Low Out Prop. Delay Rise Time Fall Time 0.8 1.9 35 10 10 ns
050-4970 Rev B 4-2009
Min 8 3
Typ 15
Max 18 5.5
Unit V
3 3 2 8 2500 3 1 1.1 2.2
ns mA A pF m V
Microsemi Website - http://www.microsemi.com
Output Characteristics
Symbol Rout FMAX FMAX Parameter Output Resistance Operating Frequency CL=3000nF + 50 Operating Frequency RL=50 15 30 Min Typ 1 Max
DRF200G
Unit MHz
Thermal Characteristics
Symbol RJC RJHS TJSTG TJMAX PD PDC Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Heat Sink Storage Temperature Maximum Junction Temperature Maximum Power Dissipation @ TSINK = 25C Total Power Dissipation @ TC = 25C Ratings 1.4 2.2 -55 to 150 175 >60 >100 Unit C/W
C
W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Figure 1, DRF100 Simplified Circuit Diagram
The Simplified DRF100 Circuit Diagram is illustrated above. The Schmitt trigger input (pin 1), Kelvin signal ground (pin 2) and the Anti-Ring Function, provide improved stability and control. The IN pin (1) is applied to a Schmitt Trigger. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for ring abatement. The P channel and N channel power drivers provide the high current to the OUTPUT (pin 5.)
050-4970 Rev B 4-2009
DRF200G
Figure 2, DRF200 Test Circuit
The Test Circuit illustrated above was used to evaluate the DRF200 (available as an evaluation Board DRF2XX / EVALSW.) The input control signal is applied to the DRF200 via IN(1) and SG(2) pins using RG188. This provides excellent noise immunity and control of the signal ground currents. The +VDD input (4) is by-passed by C1. The capacitor used for this function must be capable of supporting the RMS currents and frequency of the gate load.
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-4970 Rev B 4-2009
DRF200G
Pin Assignments Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 IN SG Ground +Vdd Out
0.629
0.199
0.244
0.221
0.823
DRF200
0.094
0.048 0.070
IN
SG
GND +Vdd OUT
.100 .400
0.023
All dimensions are .005
Figure 3, DRF200 Mechanical Outline
050-4970 Rev B 4-2009

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